d a t a sh eet product speci?cation supersedes data of 1996 july 18 file under discrete semiconductors, sc05 1996 sep 04 discrete semiconductors BFQ225 npn video transistor
1996 sep 04 2 philips semiconductors product speci?cation npn video transistor BFQ225 applications primarily intended for cascode output and buffer stages in high resolution colour monitors. description npn silicon transistor encapsulated in a 3-lead plastic sot128b package. pinning pin description 1 emitter 2 collector 3 base fig.1 simplified outline sot128b. handbook, halfpage 123 mga323 quick reference data limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions typ. max. unit v cbo collector-base voltage open emitter - 100 v i c collector current (dc) - 100 ma p tot total power dissipation t mb =25 c - 3.75 w f t transition frequency i c = 25 ma; v ce =10v 1 - ghz c re feedback capacitance i c = 0; v cb = 10 v 1.7 - pf t j junction temperature - 175 c symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 100 v v cer collector-emitter voltage r be = 100 w- 95 v v ebo emitter-base voltage open collector - 3v i c collector current (dc) see fig.2 - 100 ma i c(av) average collector current see fig.2 - 100 ma p tot total power dissipation t mb =25 c; see fig.3 - 3.75 w t stg storage temperature - 65 +175 c t j junction temperature - 175 c
1996 sep 04 3 philips semiconductors product speci?cation npn video transistor BFQ225 fig.2 dc soar. t mb =25 c. handbook, halfpage mbg486 10 2 10 10 2 10 3 10 3 10 v ce (v) i c
(ma) fig.3 power derating curve. v ce 50 v. handbook, halfpage 0 4 p tot
(w) 1 2 3 0 100 200 t mb ( o c) mbg487 thermal characteristics characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions value unit r th j-mb thermal resistance from junction to mounting base p tot = 3.75 w; t mb =25 c 40 k/w symbol parameter conditions min. typ. max. unit v (br)cbo collector-base breakdown voltage i c = 0.1 ma; i e = 0 100 -- v v (br)cer collector-emitter breakdown voltage i c = 1 ma; r be = 100 w 95 -- v v (br)ebo emitter-base breakdown voltage i c = 0; i e = 0.1 ma 3 -- v i ces collector-emitter leakage current v ce = 50 v; v be =0 -- 100 m a h fe dc current gain i c = 25 ma; v ce =10v; see fig.4 20 -- f t transition frequency i c = 25 ma; v ce =10v; f = 500 mhz; see fig.5 - 1 - ghz c re feedback capacitance i c = 0; v cb = 10 v; f = 1 mhz; see fig.6 - 1.7 - pf
1996 sep 04 4 philips semiconductors product speci?cation npn video transistor BFQ225 fig.4 dc current gain as a function of collector current; typical values. v ce = 10 v; t p = 500 m s. handbook, halfpage 0 20 100 h fe 60 20 0 40 mbg488 40 60 80 i c (ma) fig.5 transition frequency as a function of collector current; typical values. v ce = 10 v; f = 500 mhz. handbook, halfpage 0 0.4 0.8 1.2 10 2 mbg489 10 i c (ma) 20 50 f t
(mhz) fig.6 feedback capacitance as a function of collector-base voltage; typical values. f = 1 mhz. handbook, halfpage 02 10 c re
(pf) 3 1 0 2 4 mbg490 46 8 v cb (v)
1996 sep 04 5 philips semiconductors product speci?cation npn video transistor BFQ225 package outline fig.7 sot128b. dimensions in mm. handbook, full pagewidth 10.4 max 3.8
3.6 12.2
min 10 123 8.6
max 4.6
max 0.8 (3x) 2.54 2.54 2.5 max (1) 2.4 max 3.8 24.2
max 0.65 max 0.56 max 1.6 0.6 mga322
1996 sep 04 6 philips semiconductors product speci?cation npn video transistor BFQ225 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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